Schottky barriers based on metal nanoparticles deposited on InP epitaxial layers
Identifieur interne : 000574 ( Main/Repository ); précédent : 000573; suivant : 000575Schottky barriers based on metal nanoparticles deposited on InP epitaxial layers
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Abstract
Fabrication of high-quality Schottky barriers on InP epitaxial layers prepared by liquid-phase epitaxy from rare-earth treated melts is reported. The Schottky structures are based on metal nanoparticles and a graphite layer deposited from colloidal solutions onto epitaxial layers with varying carrier concentration. The structures have notably high values of the barrier height and of the rectification ratio giving evidence of a small degree of the Fermi-level pinning. Electrical characteristics of these diodes are shown to be extremely sensitive to the exposure of gas mixtures with small hydrogen content.
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Chaberska 57</s1><s2>18251 Prague</s2><s3>CZE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>République tchèque</country><wicri:noRegion>18251 Prague</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0183982</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0183982 INIST</idno><idno type="RBID">Pascal:13-0183982</idno><idno type="wicri:Area/Main/Corpus">000D73</idno><idno type="wicri:Area/Main/Repository">000574</idno></publicationStmt><seriesStmt><idno type="ISSN">0268-1242</idno><title level="j" type="abbreviated">Semicond. sci. technol.</title><title level="j" type="main">Semiconductor science and technology</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Barrier height</term><term>Carrier density</term><term>Controlled atmospheres</term><term>Epitaxial layers</term><term>Fermi level</term><term>Graphite</term><term>Indium phosphide</term><term>LPE</term><term>Nanoparticles</term><term>Rectification</term><term>Schottky barriers</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Barrière Schottky</term><term>Epitaxie phase liquide</term><term>Atmosphère contrôlée</term><term>Densité porteur charge</term><term>Hauteur barrière</term><term>Effet redresseur</term><term>Niveau Fermi</term><term>Nanoparticule</term><term>Phosphure d'indium</term><term>Couche épitaxique</term><term>Graphite</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Fabrication of high-quality Schottky barriers on InP epitaxial layers prepared by liquid-phase epitaxy from rare-earth treated melts is reported. The Schottky structures are based on metal nanoparticles and a graphite layer deposited from colloidal solutions onto epitaxial layers with varying carrier concentration. The structures have notably high values of the barrier height and of the rectification ratio giving evidence of a small degree of the Fermi-level pinning. Electrical characteristics of these diodes are shown to be extremely sensitive to the exposure of gas mixtures with small hydrogen content.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0268-1242</s0></fA01><fA02 i1="01"><s0>SSTEET</s0></fA02><fA03 i2="1"><s0>Semicond. sci. technol.</s0></fA03><fA05><s2>28</s2></fA05><fA06><s2>4</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Schottky barriers based on metal nanoparticles deposited on InP epitaxial layers</s1></fA08><fA11 i1="01" i2="1"><s1>GRYM (Jan)</s1></fA11><fA11 i1="02" i2="1"><s1>YATSKIV (Roman)</s1></fA11><fA14 i1="01"><s1>Institute of Photonics and Electronics, Academy of Sciences CR, v.v.i. Chaberska 57</s1><s2>18251 Prague</s2><s3>CZE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA20><s2>045006.1-045006.5</s2></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>21041</s2><s5>354000173322980060</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. 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